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Epitaxial Growth of a Full-Heusler Alloy Co$_{2}$FeSi on Silicon by Low-Temperature Molecular Beam Epitaxy

By S. Yamada, K. Yamamoto, K. Ueda, Y. Ando, K. Hamaya, T. Sadoh and M. Miyao

Abstract

For electrical spin injection and detection of spin-polarized electrons in silicon, we explore highly epitaxial growth of ferromagnetic full-Heusler-alloy Co2FeSi thin films on silicon substrates using low-temperature molecular beam epitaxy (LTMBE). Although in-situ reflection high energy electron diffraction images clearly show two-dimensional epitaxial growth for growth temperatures T_G of 60, 130, and 200 C, cross-sectional transmission electron microscopy experiments reveal that there are single-crystal phases other than Heusler alloys near the interface between Co_2FeSi and Si for T_G = 130 and 200 C. On the other hand, almost perfect heterointerfaces are achieved for T_G = 60 C. These results and magnetic measurements indicate that highly epitaxial growth of Co_2FeSi thin films on Si is demonstrated only for T_G = 60 C.Comment: 3 pages, 3 figure

Topics: Condensed Matter - Materials Science
Publisher: 'Elsevier BV'
Year: 2009
DOI identifier: 10.1016/j.tsf.2009.10.107
OAI identifier: oai:arXiv.org:0906.2840

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