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Insulator to semi-metal transition in graphene oxide

By Goki Eda, Cecilia Mattevi, Hisato Yamaguchi, HoKwon Kim and Manish Chhowalla

Abstract

Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semi-metal transitions with reduction. The apparent transport gap ranges from 10 ~ 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to increased number of available hopping sites.Comment: 9 pages, 4 figure

Topics: Condensed Matter - Materials Science
Year: 2009
DOI identifier: 10.1021/jp9051402
OAI identifier: oai:arXiv.org:0905.2799

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