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On compact models for high-voltage MOS devices

By F.P.H. van Beckum, J. Boersma, L.C.G.J.M. Habets, G. Meinsma, J. Molenaar, W.H.A Schilders and A.A.F. van de Ven

Abstract

Fast evaluation of integrated circuits(ICs) requires the validity of so-called compact models, i.e. simple-to-evaluate relations between the voltages and the currents in the IC-components. In this paper the compact model for a particular IC part, the LDMOS device, is studied

Topics: Information and communication technology
Year: 1999
OAI identifier: oai:generic.eprints.org:115/core70

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