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Data transmission using GaAs-based InAs-InGaAs quantum dot LEDs emitting at 1.3 µm wavelength

By M. Kicherer, A. Fiore, U. Oesterle, R.P. Stanley, M. Ilegems and R. Michalzik

Abstract

Vertical emission light-emitting diodes (LEDs), based on long-wavelength, self-assembled InAs-InGaAs quantum dots (QDs) grown on GaAs substrate, are used to demonstrate up to 1 Gbit/s digital data transmission. The devices are characterized in terms of small-signal modulation, showing bandwidths beyond 1 GHz. [on SciFinder (R)

Year: 2002
DOI identifier: 10.1049/el:20020646
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Provided by: NARCIS
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