Thin films of Yb3+/Er3+ codoped Pb(Zr,Ti)O3 (PZT:Yb/Er) have been epitaxially grown on the SrTiO3 buffered Si wafer by pulsed laser deposition. Strong upconversion photoluminescence was observed in the PZT:Yb/Er thin film. Using piezoresponse force microscopy, polar domains in the PZT:Yb/Er film can be reversibly switched with a phase change of 180°. Ferroelectric hysteresis loop shape with a well-saturated response was observed. The epitaxially grown lanthanide-doped PZT on silicon opens up a promising route to the integration of luminescent functional oxides on the silicon platform.Department of Applied Physic
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