oaioai:ira.lib.polyu.edu.hk:10397/575

A novel process for preparing PZT thick films

Abstract

A novel method for preparing PZT thick films has been developed, which integrated some advantages of common-used processes. Comparing with conventional methods, the present technology can prevent cracks, improve morphologies and properties in films, and increase an achievable thickness. The films show a dense structure and therefor uniform properties, that are comparable with those in bulk ceramics. PZT film of 3.5µm thickness has a large remanent polarization of 44µC/cm², small coercive field of 50 kV/cm, large dielectric constant of 2000 and small dielectric loss tanδ of 0.04, respectively.Department of Applied PhysicsRefereed conference pape

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oaioai:ira.lib.polyu.edu.hk:10397/575Last time updated on 2/10/2018

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