oaioai:ir.nimte.ac.cn/:174433/11773

Forming-free resistive switching in a nanoporous nitrogen-doped carbon thin film with ready-made metal nanofilaments

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Publication date
1 January 2014
Publisher
Doi

    Abstract

    An amorphous carbon thin film, with through-pores of several tens of nanometers in size, has been synthesized by annealing magnetron sputtered nitrogen-doped carbon thin films at elevated temperature in an inert atmosphere. Based on this nanoporous carbon film, we first report forming-free resistive switching in a two terminal device containing ready-made metal nanofilaments. Such nanoporous carbon-based resistance memory device shows low operation voltages and good endurance and retention performance. (C) 2014 Elsevier Ltd. All rights reserved

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    This paper was published in Institutional Repository of Ningbo Institute of Material Technology & Engineering, CAS.

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