research article
oaioai:ir.nimte.ac.cn/:174433/10022

Effect of substrate temperature on conductivity and microstructures of boron-doped silicon nanocrystals in SiCx thin films

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Publication date
1 September 2013
Publisher
Doi

    Abstract

    Boron (B)-dopedsilicon-richSiC(SiCx, 0oxo1) thin films weredepositedusingmagnetronsputtering (MS) andannealedinatubefurnace.Theeffectofsubstratetemperature(Ts) ontheconductivityand microstructuresoftheannealedB-dopedSiCx thin films werestudied.Thecrystallinefractionincreased by 5%,whiletheconductivityincreasedby10–100times,intheannealedthin films depositedatabout 200 1C, comparingtothatdepositedatRT ？400 1C. Theface-centeredcubic(fcc) Sinanocrystals(Si-NCs) formed inthesurfacelayerwhen Ts wasabout200 1C. Itwassuggestedthat Ts influenced the crystallization, conductivityandeventhemicrostructuresofSi-NCs.Theproper Ts washelpfulto improvethecrystallizationandconductivityoftheB-dopedSi-NCsinSiCx thin film

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