Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry

Abstract

Large magnetoresistance (MR) effect of few layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane was studied. A non-saturation and anisotropic MR with the value over 60% at 14 T was observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications