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Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films

By Xue-Chao Liu, Zhi-Zhan Chen, Er-Wei Shi, Da-Qian Liao and Ke-Jin Zhou

Abstract

This paper reports that the (Ga, Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co(2+) and Ga(3+) ions substitute for Zn(2+) ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic (Ga, Co)-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room temperature. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed

Topics: QC
Publisher: Institute of Physics Publishing Ltd.
Year: 2011
DOI identifier: 10.1088/1674-1056/20/3/037501
OAI identifier: oai:wrap.warwick.ac.uk:41791
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