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Molecular beam epitaxy Si/4H-SiC heterojunction diodes

By P. A. Mawby, Amador Pérez-Tomás, M. R. Jennings, M. Davis, James A. Covington, V. A. Shah and T. Grasby

Abstract

The physical and electrical properties of silicon layers grown by molecular beam epitaxy (MBE) on commercial 4H-SiC substrates are reported. We investigate the effect of the Si doping type, Si doping concentration, Si. p temperature deposition and SiC surface cleaning procedure. Si/SiC monolithic integration of Si circuits with SiC power devices can be considered as an attractive proposition and has the potential to be applied to a broad range of applications. X-ray diffraction (XRD) and scanning electron microscopy (SEM) are used to determine the Si crystal structure (cubic silicon) and morphology. I-V and C-V measurements are performed to evaluate the rectifying diode characteristics along with the Si/SiC built-in potential and energy band offsets. In the last section, we propose that our n-n Si/SiC heteojunction diode current characteristics can be explained by an isojunction drift-diffusion and thermoionic emission model where the effect of doping concentration of the silicon layer and its conduction band offset with SiC is analysed

Topics: TK, QC
Publisher: IEEE Computer Society
Year: 2007
DOI identifier: 10.1109/iwpsd.2007.4472633
OAI identifier: oai:wrap.warwick.ac.uk:30335
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