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Formation of “Black Silicon” on a Surface of Ni/Si Structure by Nd:Yag Laser Radiation

By Artūrs Medvids, Aliaksandra Karabko, Pāvels Onufrijevs, Edvīns Daukšta and Anatoly Dostanko

Abstract

We have shown the possibility to form a new type of material known as “black silicon”. After irradiation of a Si sample surface, covered with 30 nm thick Ni layer, by Nd: YAG laser beam at intensity 4.5 MW/cm the “black silicon” was formed. The formation and self-organization of cone- like microstructures on the Ni/Si surface has been detected by scanning electron microscope (SEM). Light is repeatedly reflected between the cones in the way that most of it is absorbed, therefore the surface becomes like a “black bo- dy” absorber. The micro-chemical analysis performed on SEM has shown that the microstructures contain NiSi . This was approved by presence of LO phonon line in Raman back scattering spectrum. The control of micro-cone shape and height was achieved by changing the laser intensity and number of pulses

Topics: “black silicon”, self-organization, microstructures, Nd: YAG laser
OAI identifier: oai:ortus.rtu.lv:6311
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