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Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime

By Farzan Jazaeri, Lucian Barbut, Adil Koukab and Jean-Michel Sallese

Abstract

In this paper, we propose an approximate solution to solve the two dimensional potential distribution in ultra-thin body junctionless double gate MOSFET (JL DG MOSFET) operating in the subthreshold regime. Basically, we solved the 2D-Poisson equation along the channel, while assuming a parabolic potential across the silicon thickness, which in turn leads to some explicit relationships of the subthreshold cur- rent, subthreshold slope (SS) and drain induced barrier lowering (DIBL). This approach has been assessed with Technology Computer Aided Design (TCAD) simulations, confirming that this represents an interest- ing solution for further implementation in generic JL DG MOSFETs compact models.

Topics: Junctionless, Double gate, MOSFETs, Nanowire, Subthreshold, DIBL, Short channel effects
Publisher: Elsevier (Oxford)
Year: 2013
OAI identifier: oai:infoscience.epfl.ch:187988
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