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Organic Nonvolatile Memory Devices Based on Ferroelectricity

By Ronald C.G. Naber, Kamal Asadi, Paul W.M. Blom, Dago M. de Leeuw and Bert de Boer

Abstract

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.

Year: 2010
OAI identifier: oai:ub.rug.nl:dbi/4c0cfa780b1fa
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