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Optical sensors of gas on the basis of semiconductor sources of infrared emission

By Kabatsiy V. N.


Various constructions of optic sensors of gas and gas analyzers on their basis with the use of low-powered semiconductor sources of infrared emission for wave-length of 2,5–5,0 mm made on basis of InGaAs/InAs and InAsSbP/InAs heterostructures are worked out. The experimental results demonstrating the ability of application of semiconductor sources of infrared emission in optic sensors for measuring of metan concentration (CH4) and carbon dioxide (CO2) are given. The availability of use of such sensors in the gas analysis equipment of new generation is shown

Topics: semiconductor sources of infrared emission, optic sensors, gas analyzers, gas analysis equipment, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Technology, T, DOAJ:Electrical and Nuclear Engineering, DOAJ:Technology and Engineering
Publisher: Politehperiodika
Year: 2008
OAI identifier: oai:doaj.org/article:2da171336a094e5ea0e9974d9e662879
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