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Intense Red Catho- and Photoluminescence from 200 nm Thick Samarium Doped Amorphous AlN Thin Films

By Ali Tariq and Maqbool Muhammad

Abstract

<p>Abstract</p> <p>Samarium (Sm) doped aluminum nitride (AlN) thin films are deposited on silicon (100) substrates at 77 K by rf magnetron sputtering method. Thick films of 200 nm are grown at 100&#8211;200 watts RF power and 5&#8211;8 m Torr nitrogen, using a metal target of Al with Sm. X-ray diffraction results show that films are amorphous. Cathodoluminescence (CL) studies are performed and four peaks are observed in Sm at 564, 600, 648, and 707 nm as a result of<sup>4</sup>G<sub>5/2</sub> &#8594; <sup>6</sup>H<sub>5/2</sub>,<sup>4</sup>G<sub>5/2</sub> &#8594; <sup>6</sup>H<sub>7/2</sub>,<sup>4</sup>G<sub>5/2</sub> &#8594; <sup>6</sup>H<sub>9/2</sub>, and<sup>4</sup>G<sub>5/2</sub> &#8594; <sup>6</sup>H<sub>11/2</sub>transitions. Photoluminescence (PL) provides dominant peaks at 600 and 707 nm while CL gives the intense peaks at 600 nm and 648 nm, respectively. Films are thermally activated at 1,200 K for half an hour in a nitrogen atmosphere. Thermal activation enhances the intensity of luminescence.</p

Topics: Cathodoluminescence, Photoluminescence, Thermal activation, XRD, Samarium, AlN, Chemistry, QD1-999, Science, Q, DOAJ:Chemistry (General), DOAJ:Chemistry, Materials of engineering and construction. Mechanics of materials, TA401-492
Publisher: Springer
Year: 2009
DOI identifier: 10.1007/s11671-009-9309-7
OAI identifier: oai:doaj.org/article:17732c00a0ff4165ae42eb9700a29237
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  • http://dx.doi.org/10.1007/s116... (external link)
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