Location of Repository

DRIFT EFFECTS IN HGCDTE DETECTORS

By B. PAVAN KUMAR, M. W. AKRAM, BAHNIMAN GHOSH and JOSEPH JOHN

Abstract

The characteristics of temporal drift in spectral responsivity of HgCdTe photodetectors is investigated and found to have an origin different from what has been reported in literature. Traditionally, the literature attributes the cause of drift due to the deposition of thin film of ice water on the active area of the cold detector. The source of drift as proposed in this paper is more critical owing to the difficulties in acquisition of infrared temperature measurements. A model explaining the drift phenomenon in HgCdTe detectors is described by considering the deep trapping of charge carriers and generation of radiation induced deep trap centers which are meta-stable in nature. A theoretical model is fitted to the experimental data. A comparison of the model with the experimental data shows that the radiation induced deep trap centers and charge trapping effects are mainly responsible for the drift phenomenon observed in HgCdTe detectors

Topics: HgCdTe, Spectral responsivity, Meta-stable traps, Quantum efficiency, Detectivity, Carrier lifetime, Engineering (General). Civil engineering (General), TA1-2040, Technology, T, DOAJ:General and Civil Engineering, DOAJ:Technology and Engineering, Technology (General), T1-995
Publisher: Taylor's University
Year: 2013
OAI identifier: oai:doaj.org/article:1c2b47053fc14138ab4e48641d35da9e
Journal:
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • https://doaj.org/toc/1823-4690 (external link)
  • http://jestec.taylors.edu.my/V... (external link)
  • https://doaj.org/article/1c2b4... (external link)
  • Suggested articles


    To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.