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Annealing of isolated amorphous zones in silicon

By SE Donnelly, RC Birtcher, VM Vishnyakov and G Carter

Abstract

In situ transmission electron microscopy has been used to observe the production and annealing of individual amorphous zones in silicon resulting from impacts of 200-keV Xe ions at room temperature. As has been observed previously, the total amorphous volume fraction decreases over a temperature range from room temperature to approximately 500 °C. When individual amorphous zones were monitored, however, there appeared to be no correlation of the annealing temperature with initial size: zones with similar starting sizes disappeared (crystallized) at temperatures anywhere from 70 °C to more than 400 °C. Frame-by-frame analysis of video recordings revealed that the recovery of individual zones is a two-step process that occurred in a stepwise manner with changes taking place over seconds, separated by longer periods of stability

Topics: QD, QC, other
Publisher: American Institute of Physics
OAI identifier: oai:usir.salford.ac.uk:314

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