Article thumbnail

Laser damage in silicon: energy absorption, relaxation and transport

By O. Osmani and B. Rethfeld

Abstract

Silicon irradiated with an ultrashort 800 nm-laser pulse is studied theoretically using a two tem-perature description that considers the transient free carrier density during and after irradiation. A Drude model is implemented to account for the highly transient optical parameters. We analyze the importance of considering these density-dependent parameters as well as the choice of the Drude carrier collision frequency. In addition, degeneracy and transport effects are investigated. The im-portance of each of these processes for resulting calculated damage thresholds is studied. We report fit-free damage thresholds calculations that are in very good agreement with experimental results over a wide range of pulse durations. PACS numbers: 05.70.Ln, 79.20.Ap, 44.10.+i, 72.10.Di I

Year: 2016
OAI identifier: oai:CiteSeerX.psu:10.1.1.754.8964
Provided by: CiteSeerX
Download PDF:
Sorry, we are unable to provide the full text but you may find it at the following location(s):
  • http://arxiv.org/pdf/1401.5663... (external link)
  • http://arxiv.org/pdf/1401.5663... (external link)
  • http://citeseerx.ist.psu.edu/v... (external link)

  • To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.

    Suggested articles