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Characterization of alternating-current thin-film SrS:Ce electroluminescent devices



Graduation date: 199

Year: 1997
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Provided by: ScholarsArchive@OSU

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  9. (1995). Characterization of Electrical Properties of SrS:Ce," presented at
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  11. (1992). Electrical Characterization and Modeling of ACTFEL Devices," Electroluminescence, Edited by
  12. (1992). Electrical Characterization and modeling of Alternating-Current Thin-Film Electroluminescent Devices,"
  13. (1993). Electrical Characterization of Atomic Layer Epitaxy ZnS:Mn Alternating-Current Thin-Film Electroluminescent Devices Subject to Various Waveforms,"
  14. Electrical Characterization of Deep Levels in Semiconductors," Unpublished seminar notes.
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  18. (1993). Evidence for space charge in atomic layer epitaxy ZnS:Mn alternating-current thin-film electroluminescent devices,"
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  20. (1994). Growth of SrS Single Crystals by Physical Vapor Transport,"
  21. (1992). High Efficiency SrS,SrSe:CeC13 Based Thin Film Electroluminescent Devices,"
  22. (1995). Improvement of Crystallographic and Electroluminescent (EL) Characteristics of SrS:Ce Thin Film EL Devices by Post-Deposition Annealing in Ar-S Atmosphere,"
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  35. (1995). Role of Space Charge in SrS:Ce Thin-Film Electroluminescent Devices Studied by the Photoirradiation Effect,"
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  45. (1989). White-light Emitting Thin Film Electroluminescent Devices with Stacked SrS:Ce/CaS:Eu Active Layers,"

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