Skip to main content
Article thumbnail
Location of Repository

Novel ACTFEL phosphor development



Graduation date: 1997The goal of this thesis is to identify and to explore novel ACTFEL phosphor\ud materials. Several important materials properties relevant to ACTFEL phosphor\ud development are identified. All of these properties cannot be obtained simultaneously.\ud Therefore, several key phosphor materials properties are identified as critical to the\ud development of an ACTFEL phosphor. Then, using basic chemical trends, several\ud classes of potential ACTFEL phosphors are identified. These materials systems include\ud halides, nitrides, oxynitrides, oxides, sulfides, and inhibited concentration quenching\ud systems.\ud Representative materials from some of these proposed novel ACTFEL phosphor\ud materials system are developed and evaluated as electroluminescence phosphors. Most of\ud the ACTFEL devices made using these materials do not show any significant charge\ud transfer. Detailed analysis indicates that the most probable cause of the lack of charge\ud injection is that the phosphor threshold field is too large. This excessively large threshold\ud field may be associated with the energy depth of the interface states, the low density of\ud the interface states, or the large effective mass of the phosphor material explored.\ud Several possible alternative solutions are presented to reduce the threshold field of\ud the phosphor. These includes the use of thick-film insulator, the use of a charge injection\ud layer, the use of a ceramic substrate coupled with a high temperature interface reaction,\ud and the use of bulk doping of the phosphor

Year: 1996
OAI identifier:
Provided by: ScholarsArchive@OSU

Suggested articles


  1. (1989). 2Sr0.3A1203:Eu2+ and 1.29(Ba,Ca)0,6A1203:Eu2+",
  2. A New Class of Blue TFEL Phosphors with Application to VGA Full-Color Display",
  3. (1995). A Thick/Thin-Film ac Hybrid EL Display for Use in Monochrome and Full-Color Applications",
  4. (1992). ACTFEL Phosphor Deposition by RF Sputtering",
  5. (1993). Alternating-Current Thin-Film Electroluminescent Device Physics and Modeling",
  6. (1979). Ba5SiO4C16:Eu, A New Blue-Emitting Photo luminescent Material with High Quenching Temperature",
  7. (1993). Blue Emitting Fluoride Thin-Films", doi
  8. (1995). Brighter Blue
  9. (1991). Capacitance-Voltage Analysis, SPICE Modeling, and Aging Studies of AC Thin-Film Electroluminescent Devices",
  10. (1971). Cathodoluminescence of Alkaline Earth Thiosilicate Phosphors", doi
  11. (1979). Characterization of Amorphous Barium Titanate Films prepared by RF Sputtering", doi
  12. (1989). Charge Transfer in ZnS-type electroluminescence", doi
  13. (1984). Choices of Dielectrics for TFEL Displays", doi
  14. (1993). Design, Fabrication, and Testing of Inhomogeneous Dielectrics",
  15. (1988). Diamond-like Carbon Films for Electroluminescent Applications", doi
  16. (1965). Efficiency of Eu+3 Fluorescence in Oxygen-Dominated Host Lattices", doi
  17. (1995). Electrical Characterization, Maximum Charge-Caximum Voltage (Q[max]-V[max]) Analysis, Aging and Temperature Studies of Thiogallage ThinFilm Electroluminescent Devices",
  18. (1985). Electrical Properties of Perovskite Type Oxide Thin-FIlms Prepared by RF Sputtering", doi
  19. (1994). Electrical Properties of Radio Frequency MagnetronSputtered (BaSr)TiO3 Thin Films on Indium Tin Oxide-Coated Glass Substrate", doi
  20. (1990). Electroceramics", doi
  21. (1992). Electroluminescence of ZnF2 Thin-Films Doped with Rare-Earth Ions", doi
  22. (1994). Electroluminescent Display with a Thick-Film Dielectric Layer",
  23. (1995). Electroluminescent Displays", World Scientific, doi
  24. (1986). Fluorescence of Eu2+-Activated Binary Alkaline Earth Silicate", doi
  25. (1992). High-Pressure Synthesis of New Compounds, ZnSiN2 and ZnGeN2 with Distorted Wurtzite Structure", doi
  26. (1989). Improved Stability in ACTFEL Devices",
  27. (1984). Large-Scale AC Thin-Film Electroluminescent Display Panel", doi
  28. (1981). Laser Crystals: Physics and Properties", doi
  29. (1991). Lead Zirconate Titanate Films by Rapid Thermal Processing", doi
  30. (1994). Luminescent Materials", doi
  31. (1995). Modeling Space Charge in ACTFEL Devices Using a Single-Sheet-Charge Model", doi
  32. (1995). Monte Carlo Device Modeling Applications on Parallel Computers", Ph.D. THesis,
  33. (1992). New Capacitor Dielectrics Covering
  34. (1980). New Complex Fluorides EuMgF4, EuMgF4, EuMgF4, and Their Solid Solutions: Photoluminescence and Energy Transfer",
  35. (1995). New High Luminance Thin-Film Electroluminescent Devices Using ZnGa2O4 Phosphor Emitting Layers", doi
  36. (1991). New High-Luminance Multicolor TFEL Devices Using an Oxide Phosphor Emitting Layer",
  37. (1993). Phosphor Development for Alternating-Current Thin-Film Electroluminescent Applications",
  38. (1995). Phosphor Field Dependence inALEGrown SrS:Ce ACTFEL Devices",
  39. (1995). Phosphor Technology", Phosphor Technology Center of Excelence, Oral Presentation,
  40. (1974). Photoluminescence of MgSiN2 Activated by Europium", Inorganic Materials,
  41. (1992). Photoluminescence of Sulfide Phosphors with the MB2S4 doi
  42. Physical Concepts of High-Field, Thin-FIlm Electroluminescence Devices",
  43. (1991). Physics and Technology of Thin Film Electroluminescent Displays", doi
  44. (1989). Preparation and Properties of III-V Nitride Thin Films", doi
  45. (1975). Proprietes de Luminescence des Thiosilicates Alcalins et Alcalino-Terreux", doi
  46. (1965). Quenching Interactions between Rare-Earth Ions", doi
  47. (1992). Rapid Thermal Annealing of Sol-Gel derived Lead Zirconate Titanate Thin Films", doi
  48. (1979). Rare Earth Molybdates (IV)", doi
  49. (1979). Rare Earth Pnictides", doi
  50. (1963). Rare-Earth Tungstates and 1:1 Oxytungstates", doi
  51. (1995). Science and Technology of Fullerene",
  52. (1982). Some Observations on the Luminescence of Rare-Earth Molybdates with 13'-Gd2(Mo04)3 Structure", doi
  53. (1994). Syntheses, Crytal Structure, and Vibrational Spectroscopic Properties of MgCN2, SrCN2, and BaCN2", doi
  54. Synthesis and Properties of ZnGeN2",
  55. (1974). The Rare Earth Oxynitrides LnNx0i_x (Ln = doi
  56. Thin Film Electroluminescence Device with Zn Concentration Gradient", United States Patent #
  57. (1984). Thin-Film Electroluminescent Displays: Device Characteristics and Performance",
  58. (1984). X-Ray Powder Diffraction Pattern and Unit Cell of BaSiN2", doi

To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.