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Novel ACTFEL phosphor development

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Abstract

Graduation date: 1997The goal of this thesis is to identify and to explore novel ACTFEL phosphor\ud materials. Several important materials properties relevant to ACTFEL phosphor\ud development are identified. All of these properties cannot be obtained simultaneously.\ud Therefore, several key phosphor materials properties are identified as critical to the\ud development of an ACTFEL phosphor. Then, using basic chemical trends, several\ud classes of potential ACTFEL phosphors are identified. These materials systems include\ud halides, nitrides, oxynitrides, oxides, sulfides, and inhibited concentration quenching\ud systems.\ud Representative materials from some of these proposed novel ACTFEL phosphor\ud materials system are developed and evaluated as electroluminescence phosphors. Most of\ud the ACTFEL devices made using these materials do not show any significant charge\ud transfer. Detailed analysis indicates that the most probable cause of the lack of charge\ud injection is that the phosphor threshold field is too large. This excessively large threshold\ud field may be associated with the energy depth of the interface states, the low density of\ud the interface states, or the large effective mass of the phosphor material explored.\ud Several possible alternative solutions are presented to reduce the threshold field of\ud the phosphor. These includes the use of thick-film insulator, the use of a charge injection\ud layer, the use of a ceramic substrate coupled with a high temperature interface reaction,\ud and the use of bulk doping of the phosphor

Year: 1996
OAI identifier: oai:ir.library.oregonstate.edu:1957/34193
Provided by: ScholarsArchive@OSU

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