Location of Repository

High speed analog circuit design using the heterostructure insulated gate field effect transistor

By 

Abstract

Graduation date: 1998As Si MOS approaches its maximum limits in speed and bandwidth, new\ud devices are desired to meet the needs of high speed communications and signal\ud processing. A device that exhibits superior performance to Si MOS, BJT, and\ud GaAs technology is the HEMT (high electron mobility transistor).\ud The HEMT offers superior transconductance, mobility, speed, and noise performance\ud compared to Si MOS, BJT, and standard GaAs technology. The high\ud performance is a result of improved channel mobility due to a heterojunction. At\ud the heterointerface, the majority carriers are confined to a very thin sheet forming\ud what has been termed a 2DEG (two dimensional electron gas).\ud The purpose of this thesis is to demonstrate the suitability of Honeywell's\ud delta-doped self-aligned complimentary HIGFET process for the realization of high\ud speed analog circuits. An operational amplifier and switched-capacitor circuit are\ud presented. The operational amplifier has been fabricated at Honeywell and preliminary\ud tests have been performed on the op-amp which are also presented

Year: 1997
OAI identifier: oai:ir.library.oregonstate.edu:1957/33758
Provided by: ScholarsArchive@OSU

Suggested articles

Preview

Citations

  1. (1991). A 4 KBit Synchronous Static Ransom Access Memory Based Upon Delta-Doped Complementary Heterostructure Insulated Gate Field Effect Transistor Technology," doi
  2. (1989). A 500 MHz doi
  3. (1986). A HighSpeed 1k-bit High Electron Mobility Transistor Static RAM," doi
  4. (1980). A MESFET model for use in the design of GaAs Integrated Circuits," doi
  5. (1990). A New Measurement Method of MOS Transistor Parameters," doi
  6. (1984). A Subnanosecond HEMT 1Kb SRAM," doi
  7. (1995). Analog Circuit Design Using HFETs," Thesis,
  8. (1978). Applied Physics Letters," doi
  9. (1987). CMOS Analog Circuit Design,"
  10. (1996). Complementary Heterostructure FET Standard Cells," doi
  11. (1986). Complementary Heterostructure Insulated Gate FET Circuits for High-Speed, Low Power VLSI," doi
  12. (1990). Complementary III-IV Heterostructure FETs for Low Power Integrated Circuits," doi
  13. (1996). Complimentary Heterostructure FET Technology For Low Power, High Speed Digital Applications," doi
  14. (1987). Current-Voltage and Capacitance-Voltage Characteristics of Heterostructure Insulated-Gate Field-Effect Transistors," doi
  15. (1991). Delta-Doped Complementary Heterostructure FETs with High Y-Value Pseudomorphic /nyGai_yAs Channels for Ultra-Low Power Digital IC Applications," doi
  16. (1991). Delta-Doped Complimentary Heterostructure FETs with High Y-Value Pseudomorphic /nyGai_yAs Channels for Ultra-Low-Power Digital IC Applications," doi
  17. (1980). Experimental Derivation of the source and Drain Resistance of MOS Transistors," doi
  18. (1987). GaAs Devices And Circuits," doi
  19. (1987). GaAs FET Device and Circuit Simulation in SPICE," doi
  20. (1987). GaAs Switched-Capacitor Circuits for High-Speed Signal Processing," doi
  21. (1988). Heterostructure FETs: Building a Better Transistor, Atom by Atom,"
  22. (1989). Heterostructures In MODFETs", Microwave and MillimeterWave Heterostructure Transistors and their Applications,"
  23. (1987). High Electron Mobility Transistors for Millimeter Wave and High Speed Digital IC Applications," doi
  24. (1989). Microwave and Millimeter wave heterostructure transistors and their applications," Artech House,
  25. (1991). microwave MESFETs and HEMTs," doi
  26. (1982). Obtaining the Specific Contact Resistance from Transmission Line Model Measurements," doi
  27. (1989). Quantum-Well p-Channel AlGaAs/InGaAs/GaAs Heterostructure InsulatedGate Field-Effect Transistors," doi
  28. (1984). The HEMT: a superfast transistor," doi
  29. (1985). The Selectively Doped Heterostructure Transistor: Materials, Devices, and Circuits," doi

To submit an update or takedown request for this paper, please submit an Update/Correction/Removal Request.