<p>The effects of irradiation with Ge<sup>+</sup> and Ar<sup>+</sup> ions at elevated temperatures on the relaxation behavior of pseudomorphic Si<sub>0.79</sub>Ge<sub>0.21</sub>/Si heterostructures have been compared. It was found the strain relaxation in the structures implanted with Ge<sup>+</sup> at 400°C started already upon implantation, post-implantation thermal annealing of this sample resulted in considerably higher degree of relaxation than that in control (non-implanted) samples as well as in samples implanted with Ar<sup>+</sup> both at 230 and 4000°C and with Ge<sup>+</sup> at 230°C. This result points to a dramatic influence of both the implantation temperature and ion species on relaxation behavior of the ion-irradiated heterostructure. Two possible mechanisms for this effect are discussed.</p
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