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Ion beam induced strain relaxation in pseudomorphous epitaxial SiGe layers

By A. F. Vyatkin, V. S. Avrutin, N. F. Izyumskaya, V. K. Egorov, V. V. Starkov, V. I. Zinenko, I. A. Smirnova, Peter L. F. Hemment, A. Nejim, V. I. Vdovin and T. G. Yugova


<p>The effects of irradiation with Ge<sup>+</sup> and Ar<sup>+</sup> ions at elevated temperatures on the relaxation behavior of pseudomorphic Si<sub>0.79</sub>Ge<sub>0.21</sub>/Si heterostructures have been compared. It was found the strain relaxation in the structures implanted with Ge<sup>+</sup> at 400°C started already upon implantation, post-implantation thermal annealing of this sample resulted in considerably higher degree of relaxation than that in control (non-implanted) samples as well as in samples implanted with Ar<sup>+</sup> both at 230 and 4000°C and with Ge<sup>+</sup> at 230°C. This result points to a dramatic influence of both the implantation temperature and ion species on relaxation behavior of the ion-irradiated heterostructure. Two possible mechanisms for this effect are discussed.</p

Year: 2000
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