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Enhanced Nonradiative Auger Recombination in P-Type Modulation Doped InAs/GaAs Quantum Dots

By Y D Jang, T J Badcock, D J Mowbray, M S Skolnick, J Park, D Lee, H Y Liu, M Hopkinson, R A Hogg and A D Andreev

Abstract

<p>The photoluminescence efficiency and carrier recombination time of p-type modulation doped InAs/GaAs quantum dots (QDs) have been measured as a function of doping density. At 10 K the carrier lifetime decreases from 1200 to 350 ps over the doping range of 0 and 30 acceptors/QD. This behavior is attributed to an enhancement of the Auger-type recombination due to the presence of extrinsic holes in the QDs. The hole density dependence of the Auger process is found to be weaker than in bulk semiconductors and quantum wells (QWs). (c) 2008 American Institute of Physics.</p

Year: 2008
DOI identifier: 10.1063/1.2975961
OAI identifier: oai:epubs.surrey.ac.uk:183

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