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Ultraviolet Photoluminescence from Gd-implanted AlN Epilayers

By J M Zavada, N Nepal, J Y Lin, H X Jiang, E Brown, U Hommerich, J Hite, G T Thaler, C R Abernathy, S J Pearton and R Gwilliam

Abstract

<p>Deep ultraviolet emission from gadolinium (Gd)-implanted AlN thin films has been observed using photoluminescence (PL) spectroscopy. The AlN epilayers were ion implanted with Gd to a total dose of similar to 6x10(14) cm(-2). Using the output at 197 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm, characteristic of the trivalent Gd ion. A broader emission band, also centered at 318 nm, was measured with excitation at 263 nm. The PL emission intensity decreased by less than a factor of 3 over the sample temperature range of 10-300 K and decay transients were of the order of nanoseconds.</p

Year: 2006
DOI identifier: 10.1063/1.2357552
OAI identifier: oai:epubs.surrey.ac.uk:74

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