Performance of low-loss RF MEMS capacitive switches

Abstract

Abstract—This letter details the construction and performance of metal membrane radio frequency MEMS switches at mi-crowave and millimeter-wave frequencies. These shunt switches possess a movable metal membrane which pulls down onto a metal/dielectric sandwich to form a capacitive switch. These switches exhibit low loss (<0.25 dB at 35 GHz) with good isolation (35 dB at 35 GHz). These devices possess on–off capacitance ratios in the range of 80–110 with a cutoff frequency (figure of merit) in excess of 9000 GHz, significantly better than that achievable with electronic switching devices. Index Terms — Low-loss, membrane, microelectromechanical systems, micromachining, microwave, millimeter-wave, sacrificia