Robust procedure for creating and characterizing the atomic structure of scanning tunneling microscope tips

Scanning tunneling microscopes (STM) are used extensively for studying and manipulating matter at the atomic scale. In spite of the critical role of the STM tip, the control of the atomic-scale shape of STM tips remains a poorly solved problem. Here, we present a method for preparing tips {\it in-situ} and for ensuring the crystalline structure and reproducibly preparing tip structure up to the second atomic layer. We demonstrate a controlled evolution of such tips starting from undefined tip shapes.Comment: 12 pages preprint-style; 5 figure

Nanofabricated tips for device-based scanning tunneling microscopy

We report on the fabrication and performance of a new kind of tip for scanning tunneling microscopy. By fully incorporating a metallic tip on a silicon chip using modern micromachining and nanofabrication techniques, we realize so-called smart tips and show the possibility of device-based STM tips. Contrary to conventional etched metal wire tips, these can be integrated into lithographically defined electrical circuits. We describe a new fabrication method to create a defined apex on a silicon chip and experimentally demonstrate the high performance of the smart tips, both in stability and resolution. In situ tip preparation methods are possible and we verify that they can resolve the herringbone reconstruction and Friedel oscillations on Au(111) surfaces. We further present an overview of possible applications

Poor electronic screening in lightly doped Mott insulators observed with scanning tunneling microscopy

The effective Mott gap measured by scanning tunneling microscopy (STM) in the lightly doped Mott insulator $(\rm{Sr}_{1 -x}\rm{La}_x)_2\rm{IrO}_4$ differs greatly from values reported by photoemission and optical experiments. Here, we show that this is a consequence of the poor electronic screening of the tip-induced electric field in this material. Such effects are well known from STM experiments on semiconductors, and go under the name of tip-induced band bending (TIBB). We show that this phenomenon also exists in the lightly doped Mott insulator $(\rm{Sr}_{1 -x}\rm{La}_x)_2\rm{IrO}_4$ and that, at doping concentrations of $x\leq 4 \%$, it causes the measured energy gap in the sample density of states to be bigger than the one measured with other techniques. We develop a model able to retrieve the intrinsic energy gap leading to a value which is in rough agreement with other experiments, bridging the apparent contradiction. At doping $x \approx 5 \%$ we further observe circular features in the conductance layers that point to the emergence of a significant density of free carriers in this doping range, and to the presence of a small concentration of donor atoms. We illustrate the importance of considering the presence of TIBB when doing STM experiments on correlated-electron systems and discuss the similarities and differences between STM measurements on semiconductors and lightly doped Mott insulators.Comment: 9 pages, 5 figure

Single-electron charge transfer into putative Majorana and trivial modes in individual vortices

Majorana bound states are putative collective excitations in solids that exhibit the self-conjugate property of Majorana fermions - they are their own antiparticles. In iron-based superconductors, zero-energy states in vortices have been reported as potential Majorana bound states, but the evidence remains controversial. Here, we use scanning tunneling noise spectroscopy to study the tunneling process into vortex bound states in the conventional superconductor NbSe2, and in the putative Majorana platform FeTe0.55Se0.45. We find that tunneling into vortex bound states in both cases exhibits charge transfer of a single electron charge. Our data for the zero-energy bound states in FeTe0.55Se0.45 exclude the possibility of Yu-Shiba-Rusinov states and are consistent with both Majorana bound states and trivial vortex bound states. Our results open an avenue for investigating the exotic states in vortex cores and for future Majorana devices, although further theoretical investigations involving charge dynamics and superconducting tips are necessary.Comment: 15 pages, 4 figures, and 16 pages for supplementary informatio

Why shot noise does not generally detect pairing in mesoscopic superconducting tunnel junctions

The shot noise in tunneling experiments reflects the Poissonian nature of the tunneling process. The shot noise power is proportional to both the magnitude of the current and the effective charge of the carrier. Shot-noise spectroscopy thus enables - in principle - to determine the effective charge q of the charge carriers that tunnel. This can be used to detect electron pairing in superconductors: in the normal state, the noise corresponds to single electron tunneling (q = 1e), while in the paired state, the noise corresponds to q = 2e, because of Andreev reflections. Here, we use a newly developed amplifier to reveal that in typical mesoscopic superconducting junctions, the shot noise does not reflect the signatures of pairing and instead stays at a level corresponding to q = 1e. We show that transparency can control the shot noise and this q = 1e is due to the large number of tunneling channels with each having very low transparency. At such transparencies, the shot noise in the junction resembles that of a metallic instead of a superconducting tunnel junction. Our results indicate that in typical mesoscopic superconducting junctions one should expect q = 1e noise, and lead to design guidelines for junctions that allow the detection of electron pairing

Puddle formation, persistent gaps, and non-mean-field breakdown of superconductivity in overdoped (Pb,Bi)2Sr2CuO6+{\delta}

The cuprate high-temperature superconductors exhibit many unexplained electronic phases, but it was often thought that the superconductivity at sufficiently high doping is governed by conventional mean-field Bardeen-Cooper-Schrieffer (BCS) theory[1]. However, recent measurements show that the number of paired electrons (the superfluid density) vanishes when the transition temperature Tc goes to zero[2], in contradiction to expectation from BCS theory. The origin of this anomalous vanishing is unknown. Our scanning tunneling spectroscopy measurements in the overdoped regime of the (Pb,Bi)2Sr2CuO6+{\delta} high-temperature superconductor show that it is due to the emergence of puddled superconductivity, featuring nanoscale superconducting islands in a metallic matrix[3,4]. Our measurements further reveal that this puddling is driven by gap filling, while the gap itself persists beyond the breakdown of superconductivity. The important implication is that it is not a diminishing pairing interaction that causes the breakdown of superconductivity. Unexpectedly, the measured gap-to-filling correlation also reveals that pair-breaking by disorder does not play a dominant role and that the mechanism of superconductivity in overdoped cuprate superconductors is qualitatively different from conventional mean-field theory

Spatially dispersing Yu-Shiba-Rusinov states in the unconventional superconductor FeTe_0.55Se_0.45

By using scanning tunneling microscopy (STM) we find and characterize dispersive, energy-symmetric in-gap states in the iron-based superconductor FeTe0.55Se0.45, a material that exhibits signatures of topological superconductivity, and Majorana bound states at vortex cores or at impurity locations. We use a superconducting STM tip for enhanced energy resolution, which enables us to show that impurity states can be tuned through the Fermi level with varying tip-sample distance. We find that the impurity state is of the Yu-Shiba-Rusinov (YSR) type, and argue that the energy shift is caused by the low superfluid density in FeTe0.55Se0.45, which allows the electric field of the tip to slightly penetrate the sample. We model the newly introduced tip-gating scenario within the single-impurity Anderson model and find good agreement to the experimental data.</p