Three-Dimensional Full-Band Simulations of Si Nanowire

Abstract

In this paper the current characteristics of Si triple-gate nanowire transistors are simulated for different channel orientations. The full-band properties of Si are taken into account via the semi-empirical  ¢¡¤£¦¥¨§ ©  � � tight-binding method. The three-dimensional electrostatic potential is solved selfconsistently with the device charge density. This allows the treatment of more realistic transistor structures with rough semiconductor-oxide interfaces along the channel