Hilton KP

Horsfall A

Hydes A

Johnson CM

Munday A

Nikitina I

Uren M

Vassilevski K

Wright N

Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p +-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normally-on 4H-SiC TI-VJFETs had specific on-state resistance (RON-S) of 8 mΩ.cm2 measured at room temperature. These devices operated reversibly at a current density of 100 A/cm2 whilst placed on a hot stage at temperature of 500 \ub0C and without any protective atmosphere. The change of RON-S with temperature rising from 20 to 500 \ub0C followed a power law (∼ T 2.4) which is close to the temperature dependence of electron mobility in 4H-SiC. \ua9 (2009) Trans Tech Publications, Switzerland

Newcastle University E-Prints

Silicon carbide vertical JFET operating at high temperature

Trenched and implanted vertical JFETs (TI-VJFETs) with blocking voltages of 700 V were fabricated on commercial 4H-SiC epitaxial wafers. Vertical p(+)-n junctions were formed by aluminium implantation in sidewalls of strip-like mesa structures. Normally-on 4H-SiC TI-VJFETs had specific on-state resistance (RON-S) of 8 m Omega.cm(2) measured at room temperature. These devices operated reversibly at a current density of 100 A/cm(2) whilst placed on a hot stage at temperature of 500 degrees C and without any protective atmosphere. The change of RON-S with temperature rising from 20 to 500 degrees C followed a power law (similar to T-2.4) which is close to the temperature dependence of electron mobility in 4H-SiC

Silicon Carbide Vertical JFET Operating at High Temperature

Silicon carbide vertical JFET operating at high temperature

Abstract

Similar works

Full text

Available Versions

Newcastle University E-Prints

Newcastle University E-Prints