CuIn1 – xAlxSe2 (CIAS) thin films were grown using flash evaporation method by varying the film
thickness from 500 nm to 700 nm. Prepared CIAS thin films were annealed at 573 K for one hour in
vacuum. The influence of film’s thickness and the annealing temperature were characterized by the X-ray
diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive analysis of X-ray (EDAX),
Optical transmission measurements, and Hall Effect measurement. As the film thickness increases the
crystallinity improves and due to that the optical absorption also improves. The further improvement for
different thicknesses of CIAS thin films were observed by annealing. The thicker (700 nm) and annealed
CIAS thin film shows the crystallite size of 24.3 nm, energy band gap of 1.19 eV, and resistivity of about
9 102 Ω cm.
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