Our research is about bilateral transfer, a concept in motor learning where skills
learned by one limb are "transferred", allowing the opposite limb to benefit from what
was learned by the first limb. Previous research into bilateral transfer has raised
questions about whether specific aspects of motor coordination are or are not
transferred. We wanted to see whether learning to control pinch force by the thumb
and index finger is transferable, and if it is, whether the learning transfers equally
from either hand. We also want to look into the effects of different force levels on
the degree of transfer. We designed a task using a program that takes force levels
as inputs and has the participant trace shapes on a screen. By having participants
perform with one hand, then practice with the other, and finally perform again with
the initial hand, we can measure transfer as the difference in performance before
and after practice with the other hand.Kinesiology and Health Educatio

Bertazzi, F.

Eich, D.

Figgemeier, H.

Ghione, G.

Goano, M.

Hanna, S.

Palmieri, A.

Vallone, M.

English

Vallone M.

Goano M.

Bertazzi F.

Ghione G.

Palmieri A.

Hanna S.

Eich D.

Figgemeier H.

PORTO@iris (Publications Open Repository TOrino - Politecnico di Torino)

29 November 2022POLITECNICO DI TORINORepository ISTITUZIONALEReducing inter-pixel crosstalk in HgCdTe detectors / Vallone, M.; Goano, M.; Bertazzi, F.; Ghione, G.; Palmieri, A.;Hanna, S.; Eich, D.; Figgemeier, H.. - STAMPA. - 2019-:(2019), pp. 83-84. ((Intervento presentato al convegno 19thInternational Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019 tenutosi a Ottawa (Canada)nel 2019 [10.1109/NUSOD.2019.8806849].OriginalReducing inter-pixel crosstalk in HgCdTe detectorsPublisher:PublishedDOI:10.1109/NUSOD.2019.8806849Terms of use:openAccessPublisher copyright(Article begins on next page)This article is made available under terms and conditions as specified in the  corresponding bibliographic description inthe repositoryAvailability:This version is available at: 11583/2761332 since: 2019-10-18T12:19:40ZIEEE Computer SocietyReducing inter-pixel crosstalk in HgCdTe detectorsM. Vallone∗, M. Goano∗, F. Bertazzi∗, G. Ghione∗, A. Palmieri∗, S. Hanna†, D. Eich†, H. Figgemeier†∗ Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 Torino, Italy† AIM Infrarot-Module GmbH, Theresienstraße 2, D-74072 Heilbronn, GermanyE-mail: marco.vallone@polito.itAbstract—Three-dimensional, realistic full-wave electromag-netic and electrical simulations were done considering a planarHgCdTe 5 × 5 pixel miniarray with 5µm-wide square pixels,illuminated by narrow Gaussian beams. The results suggest that,by avoiding quasi-neutral regions in the detector’s absorberthrough majority carriers depletion, the inter-pixel crosstalkdue to the diffusion of photogenerated carriers is significantlyreduced.I. INTRODUCTIONThe II-VI alloy HgCdTe is one of the most versatilematerials for the realization of large format infrared (IR)focal plane arrays (FPAs) [1]. Majority carrier depletion ofthe absorber was indicated as a method to suppress the darkcurrent originating from quasi-neutral regions, reducing theneed of expensive cryogenic cooling systems [2], [3]. We showthat carrier depletion is also effective to cut down the diffusiveinter-pixel crosstalk [4], [5], a deleterious effect due to lateralcarrier diffusion in planar FPAs, particularly relevant when thepixel pitch (often 3 – 15 µm) is much smaller than minoritycarriers diffusion length (in the orders of tens of micrometers).II. PHOTODETECTOR STRUCTUREFig. 1 shows the photodetector structure: it is a planar 5×5pixels miniarray with 5µm-wide square pixels with p-on-n doping scheme, consisting in a small modification of aliterature example [6], more extensively described in [7]. Anarrow-bandgap, low donor-doped and compositionally gradedHg1−xCdxTe absorber is connected by two transition layers totwo wide-bandgap HgCdTe regions (buffer and cap, Fig. 1(c))with appropriately chosen doping profile. The absorber’s com-positional grading makes the detector suitable for both midwavelength (MWIR, λ ∈ [3, 5]µm) and long wavelength(LWIR, λ ∈ [8, 14]µm) operation. The HgCdTe propertieswere described through the models reported in [4], taking intoaccount the composition, doping, and temperature dependenceof the HgCdTe alloy. The Shockley-Read-Hall (SRH) recombi-nation processes were modeled as in [8] considering a lifetimearound 100µs. Fermi-Dirac statistics and incomplete dopantionization were taken into account.III. MODELING METHODThe geometry, doping and composition profiles were definedemploying the Sentaurus three-dimensional (3D) numericalsimulator by Synopsys [9], also used to perform the electricalsimulations in the drift-diffusion approximation. With refer-ence to Fig. 1(a,b), in the present work we defined the inter-pixel crosstalk as the photoresponse of a neighboring pixel(NNs or CNs) to a beam illuminating the central pixel (CP).In order to obtain the solution of the electromagneticproblem, we sampled the absorber’s and the transition regions’composition profiles [7], converting them to staircases ofN = 30 sublayers, each with uniform value for the complexrefractive index nr + iκ according to the sublayer’s HgCdTecomposition ([4], Table I), as shown in Fig. 1(b,d). With thisapproach, the EMW commercial simulator [9] was able tosolve the electromagnetic problem by a full-wave approach,according to the Finite Differences Time Domain (FDTD)method [10]. The optical generation rate distribution Gopt intothe pixel due to interband optical absorption was inserted asFig. 1. (a) The 3D miniarray and (b) its Cd mole fraction x of Hg1−xCdxTe profile along z (Eg is the bandgap). (c) The discretization of the real nr andimaginary κ parts of the absorber’s refractive index profile along z.2 3 4 5 6 7 8 9 10 11 12wavelength,  m00.10.20.30.40.50.60.70.80.91QE2 3 4 5 6 7 8 9 10 11 12wavelength,  m00.050.10.150.20.250.30.350.40.450.5Inter-pixel crosstalkFig. 2. (a) The CP and NNs spectral QE for the described Gaussian beamillumination centered on the CP, for T = 140K and Vbias = −0.1V and−0.5V. (b) For the same temperature, the “optical” and “diffusive” inter-pixelcrosstalk (adimensional ratios) are shown for Vbias = −0.1V and −0.5V (theoptical crosstals is bias-independent).a source term in the drift-diffusion continuity equations afterhaving applied the same reverse bias Vbias to all the pixels.IV. RESULTS, COMMENTS AND CONCLUSIONSFig. 2 shows the spectral quantum efficiency QE and theinter-pixel crosstalk at T = 140K for Vbias = −0.1V and−0.5V for the described illumination, where the definitionsfor the “optical” ONNs, “total” CNNs, and “diffusive” DNNscontributions to the crosstalkONNs =∫VNNsGopt(x, y, z) dx dy dz∫VCPGopt(x, y, z) dx dy dz(1)CNNs =Iph,NNsIph,CP, DNNs ≈ CNNs −ONNs (2)have been introduced (Iph is the photocurrent, VCP andVNNs are the CP and NNs pixel volumes). By increasing thereverse bias from −0.1V to −0.5V, the carrier depletion inthe absorber increases significantly, allowing a larger fractionof photogenerated carriers to drift towards the CP contact,before they diffuse laterally: this is pretty apparent comparingthe dashed and solid lines in Fig. 2(a,b), referred to −0.1Vand −0.5V respectively. The moderate electrical field in theabsorber that originates from the depletion of the majoritycarriers is enough to curtail the inter-pixel “diffusive” crosstalkeven at moderate reverse bias. Beside the ensuing Auger sup-pression [3], this is an additional advantage of carrier-depleteddetectors. Futher investigations will cover the response to non-monochromatic illumination [11], [12], considering differentand higher values of temperature, and characterizing the effectof the absorber’s background doping.REFERENCES[1] M. A. Kinch, “The future of infrared; III-Vs or HgCdTe?” J. Electron.Mater., vol. 44, no. 9, pp. 2969–2976, 2015.[2] ——, “Fundamental physics of infrared detector materials,” J. Electron.Mater., vol. 29, no. 6, pp. 809–817, 2000.[3] J. Schuster, R. DeWames, and P. S. Wijewarnasurya, “Dark currents ina fully-depleted LWIR HgCdTe P -on-n heterojunction: analytical andnumerical simulations,” J. Electron. Mater., vol. 46, no. 11, pp. 6295–6305, 2017.[4] M. Vallone, M. Goano, F. Bertazzi, G. Ghione, W. Schirmacher,S. Hanna, and H. Figgemeier, “Simulation of small-pitch HgCdTephotodetectors,” J. Electron. Mater., vol. 46, no. 9, pp. 5458–5470, 2017.[5] M. Vallone, M. Goano, F. Bertazzi, G. Ghione, S. Hanna, D. Eich, andH. Figgemeier, “Diffusive-probabilistic model for inter-pixel crosstalkin HgCdTe focal plane arrays,” IEEE J. Electron Devices Soc., vol. 6,no. 1, pp. 664–673, 2018.[6] A. Rogalski, M. Kopytko, and P. Martyniuk, “Performance prediction ofp-i-n HgCdTe long-wavelength infrared HOT photodiodes,” Appl. Opt.,vol. 57, no. 18, pp. D11–D18, 2018.[7] M. Vallone, M. Goano, F. Bertazzi, G. Ghione, S. Hanna, D. Eich, andH. Figgemeier, “FDTD simulation of compositionally graded HgCdTephotodetectors,” Infrared Phys. Tech., vol. 97, pp. 203–209, 2019.[8] M. Vallone, M. Mandurrino, M. Goano, F. Bertazzi, G. Ghione, W. Schir-macher, S. Hanna, and H. Figgemeier, “Numerical modeling of SRH andtunneling mechanisms in high-operating-temperature MWIR HgCdTephotodetectors,” J. Electron. Mater., vol. 44, no. 9, pp. 3056–3063, 2015.[9] Sentaurus Device User Guide. Version M-2017.09, Synopsys, Inc.,Mountain View, CA, Sept. 2017.[10] J.-P. Berenger, “A perfectly matched layer for the absorption of electro-magnetic waves,” J. Comp. Phys., vol. 114, no. 2, pp. 185–200, 1994.[11] M. Vallone, A. Palmieri, M. Calciati, F. Bertazzi, F. Cappelluti,G. Ghione, M. Goano, S. Hanna, H. Figgemeier, R. Scarmozzino,E. Heller, and M. Bahl, “Broadband 3D optical modeling of HgCdTeinfrared focal plane arrays,” in 17th International Conference on Numer-ical Simulation of Optoelectronic Devices (NUSOD 2017), Copenhagen,Denmark, July 2017, pp. 205–206.[12] M. Vallone, A. Palmieri, M. Calciati, F. Bertazzi, F. Cappelluti,G. Ghione, M. Goano, M. Bahl, E. Heller, R. Scarmozzino, S. Hanna,D. Eich, and H. Figgemeier, “Non-monochromatic 3D optical simulationof HgCdTe focal plane arrays,” J. Electron. Mater., vol. 47, no. 10, pp.5742–5751, 2018.

Reducing inter-pixel crosstalk in HgCdTe detectors

Muller, Karl

Rai, Aakarsh

Texas ScholarWorks

Effects of Force Level and Hand Dominance on Bilateral Transfer of a Fine Motor Skill.K. Muller, A. Rai, L. Abraham   Motor Coordination Laboratory, Kinesiology and Health Education, The University of Texas at AustinIntroduction Objective:To investigate previously reported differences in bilateral transfer of a motor skill depending on force level of the task and direction of transferAims:Determine whether dominant limb practice has a higher impact on non-dominant limb performance than vice versa. Determine whether a task with a higher force level will lead to more transfer of skillMethodsParticipants:• 40 right-handed, healthy volunteers  ages 18-30 years randomly assigned to 1 of 4 groups: right hand practice, high force (DH), right hand practice, low force (DL), left hand practice, high force (NH), left hand practice,  low force (NL).Task:Manipulate a computer screen cursor with isometric forces produced by the left and right index fingers in order to trace an X-shape. Participants will perform one test trial with one hand, followed by 20 practice trials with the other, followed by another test with the original hand. What hand they begin with, as well as the force level they will be performing the task at depends on what group they are in. Independent analog force data controlling the cursor location were collected @ 1kHz from both index fingers and compared to the moving target location using our MFQS apparatus (Figure 3)Each participant performed:• Pre isometric digit flexion maximal voluntary contractions (MVC) to normalize testing force levels.• 1 familiarity trial to become accustomed to the equipment, including target movement and cursor control• 1 baseline test trial of the task with their test hand• 2 blocks of 10 practice trials with the opposite hand• 1 test trial of the task with their test hand, to compare to the baseline trialDependent Measures:• Tracking error - root mean squared error (RMSE)• Error Variability - coefficient of variability of the error (CVE)• Time – time taken to complete the tracing taskResults (Pilot Data)Figure 2: CVE values before and after practiceFigure 1: RMSE values before and after practiceSummary of ResultsThe person that experiened the largest drop in RMSE was the high force, right hand practicing left hand testing group (DH). Next was the DL group, followed by the NH group, with the NL group having an increase in error.(Figure 1). Cursor movement smoothness improved for each of the groups, with the NL group expriencing the most reduction in CVE, with the DH group closely behind. (Figure 2). Time taken to finish the task remained almost the same for the DL and NH groups, and increased for the NL group. Time decreased for the DH group.Conclusions These preliminary results support our hypothesis. The DH was the only group to express improvement in all three metrics of performance, with a lower RMSE, CVE, and Time. We hypothesized that more bilateral transfer would occur in higher force conditions, and from the right hand to the left, and this supports that idea. The NL group was hypothesized to show the least improvement, and this is what our results show. NL had only a derease in CVE, but an increase in Time and RMSE.DH had the second most improvement as both DH and NL experience little change in time but DH had a larger decrease in RMSE. This leads us to believe that directionality is more important than force level when it comes to degree of transfer, however further testing is required.Figure 4: The task shapeApparatusFigure 3: MFQS apparatus ReferencesDettmers , C. , Fink , G. R. , Lemon , R. N. , Stephan , K. M. , Passingham , R. E. , Silbersweig , D. , Holmes , A. , Ridding , M. C. , & Frackowiak , R. S. ( 1995 ) Relation between cerebral activity and force in the motor areas of the human brain . Journal of Neurophysiology , 74 , 802 - 815 . Parlow , S. E. , & Kinsbourne , M. ( 1989 ) Asymmetrical transfer of training between hands: implications for interhemispheric communication in normal brain . Brain and Cognition , 11 , 98 - 113 . Spirduso WW, Eakin T, Francis K, and C. Stanford (2005). Quantification of manual force control and tremor. Journal of Motor Behavior. Vol. 37 No. 3, p. 197-210. Teixeira , L. A. ( 1993 ) Bilateral transfer of learning: the effector side in focus . Journal of Human Movement Studies , 25 , 243 - 253 . Teixeira , L. A. ( 2000 ) Timing and force components in bilateral transfer of learning . Brain and Cognition , 44 , 455 - 469 . Yao, Wan X., Alberto Cordova, Yufei Huang, Yan Wang, and Xing Lu. (2014):  "Bilateral Transfer For Learning To Control Timing But Not For Learning To Control Fine Force 1." Perceptual and Motor Skills 118.2 400-10. Web.Figure 3: Time taken (seconds) before and after practice

Effects of Force Level and Hand Dominance on Bilateral Transfer of a Fine Motor Skill

In state-of-the-art, large format, HgCdTe-based infrared focal plane arrays the typical pixel size (3–10 μm) is of the order of the operating wavelength and much smaller than the carrier diffusion length. This makes inter-pixel crosstalk a limiting factor, especially in planar structures. Employing three-dimensional electromagnetic and electrical simulations we show that, besides reducing the dark current through Auger suppression, majority carrier depletion of the detector absorber is also effective in curtailing the inter-pixel crosstalk due to carrier diffusion. In the case of a 5μm-pitch pixel, a proper design of the absorber composition and doping profile allows to reduce inter-pixel crosstalk by more than a factor of two when increasing the reverse bias from −0.1 to −0.5V, keeping the contribution to crosstalk coming from carrier diffusion between 2 and 12% in the mid- and long-wavelength infrared spectrum

https://repositories.lib.utexas.edu/bitstream/2152/34595/2/mullerbazaarposter.pdf

Effects of Force Level and Hand Dominance on Bilateral Transfer of a Fine Motor Skill

Abstract

Similar works

Full text

Available Versions

PORTO@iris (Publications Open Repository TOrino - Politecnico di Torino)

Texas ScholarWorks

PORTO@iris (Publications Open Repository TOrino - Politecnico di Torino)