Statistical variability in implant-free quantum-well MOSFETs with InGaAs and Ge: a comparative 3D simulation study

Abstract

Introduction of high mobility channel materials including III-Vs and Ge into future CMOS generations offer the potential for enhanced transport properties compared to Si. The Implant Free Quantum Well (IFQW) architecture offers an attractive design to introduce these materials, providing excellent electrostatic integrity. Statistical variability introduced by the discreteness of charge and granularity of matter has become a key factor for current and future generations of MOSFETs and in this work numerical simulations are used to critically assess the statistical variability in IFQW transistors and compare results with equivalent conventional Si ‘bulk’ MOSFETs