Traditional approaches to controlling single spins in quantum dots require
the generation of large electromagnetic fields to drive many Rabi oscillations
within the spin coherence time. We demonstrate "flopping-mode" electric dipole
spin resonance, where an electron is electrically driven in a Si/SiGe double
quantum dot in the presence of a large magnetic field gradient. At zero
detuning, charge delocalization across the double quantum dot enhances coupling
to the drive field and enables low power electric dipole spin resonance.
Through dispersive measurements of the single electron spin state, we
demonstrate a nearly three order of magnitude improvement in driving efficiency
using flopping-mode resonance, which should facilitate low power spin control
in quantum dot arrays