FeVO<sub>4</sub> is
a potentially promising n-type multimetal oxide
semiconductor for photoelectrochemical water splitting based on its
favorable optical band gap of ca. 2.06 eV that allows for the absorption
of visible light up to around 600 nm. However, the presently demonstrated
photocurrent values on FeVO<sub>4</sub> photoanodes are yet considerably
low when comparing with α-Fe<sub>2</sub>O<sub>3</sub>, although
FeVO<sub>4</sub> can absorb comparable wavelengths of sunlight as
α-Fe<sub>2</sub>O<sub>3</sub>. Donor-type doping and constructing
nanoporous film morphology have afforded desirable (but far from satisfactory)
improvements in FeVO<sub>4</sub> photoanodes, whereas the fundamental
properties, such as absorption coefficients and the nature of optical
transition, and a quantitative analysis of the efficiency losses for
FeVO<sub>4</sub> photoanodes remain elusive. In the present study,
we conduct a thorough experimental analysis of structural, optical,
charge transport, and surface catalysis properties of FeVO<sub>4</sub> thin films to investigate and clarify how and where the efficiency
losses occur. Based on the results, the charge recombination pathways
and light-harvesting loss in FeVO<sub>4</sub> thin-film photoanodes
are identified and quantitatively determined. Our study will deepen
the understanding on the photoelectrochemical behaviors of FeVO<sub>4</sub> photoanodes and will also shed light on the optimization
routes to engineer this material to approach its theoretical maximum