In Situ TEM Creation and
Electrical Characterization
of Nanowire Devices
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Abstract
We demonstrate the observation and measurement of simple
nanoscale
devices over their complete lifecycle from creation to failure within
a transmission electron microscope. Devices were formed by growing
Si nanowires, using the vapor–liquid–solid method, to
form bridges between Si cantilevers. We characterize the formation
of the contact between the nanowire and the cantilever, showing that
the nature of the connection depends on the flow of heat and electrical
current during and after the moment of contact. We measure the electrical
properties and high current failure characteristics of the resulting
bridge devices in situ and relate these to the structure. We also
describe processes to modify the contact and the nanowire surface
after device formation. The technique we describe allows the direct
analysis of the processes taking place during device formation and
use, correlating specific nanoscale structural and electrical parameters
on an individual device basis