Analog
Memristors Based on Thickening/Thinning of
Ag Nanofilaments in Amorphous Manganite Thin Films
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Abstract
We
developed an analog memristor based on the thickening/thinning
of Ag nanofilaments in amorphous La<sub>1–<i>x</i></sub>Sr<sub><i>x</i></sub>MnO<sub>3</sub> (a-LSMO) thin
films. The Ag/a-LSMO/Pt memristor exhibited excellent pinched hysteresis
loops under high-excitation frequency, and the areas enclosed by the
pinched hysteresis loops shrank with increasing excitation frequency,
which is a characteristic typical of a memristor. The memristor also
showed continuously tunable synapselike resistance and stable endurance.
The a-LSMO thin films in the memristor acted as a solid electrolyte
for Ag<sup>+</sup> cations, and only the Ag/a-LSMO/Pt memristor electroformed
with a larger current compliance easily exhibited high-frequency pinched
hysteresis loops. On the basis of the electrochemical metallization
(ECM) theory and electrical transport models of quantum wires and
nanowires, we concluded that the memristance is ultimately determined
by the amount of charge supplied by the external current. The state
equations of the memristor were established, and charge was the state
variable. This study provides a new analog memristor based on metal
nanofilaments thickening/thinning in ECM cells, which can be extended
to other resistive switching materials. The new memristor may enable
the development of beyond von Neumann computers