Band Gap
Tuning of Twinned GaAsP Ternary Nanowires
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Abstract
GaAs<sub>1–<i>x</i></sub>P<sub><i>x</i></sub> ternary
alloy nanowires have drawn much interest because their
tunable band gaps, which range from the near-infrared to visible region,
are promising for advanced and integrated nanoscale optoelectronic
devices. In this study, we synthesized compositionally tuned GaAs<sub>1<i>–x</i></sub>P<sub><i>x</i></sub> (0
≤ <i>x</i> ≤ 1) alloy nanowires with two average
diameters of 60 and 120 nm by vapor transport method. The nanowires
exhibit exclusively twinned superlattice structures, consisting of
zinc blende phase twinned octahedral slice segments between wurtzite
phase planes. Smaller diameter and higher P content (<i>x</i>) result in shorter periodic superlattice structures. The band gap
of the smaller diameter nanowires is larger than that of the larger
diameter nanowires by about 90 meV, suggesting that the twinned superlattice
structure increases the band gap. The increase in band gap is ascribed
to the higher band gap of the wurtzite phase than that of the zinc
blende phase