Structure–Band Gap Relationships in Hexagonal
Polytypes and Low-Dimensional Structures of Hybrid Tin Iodide Perovskites
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Abstract
The
present study deals with the structural characterization and classification
of the novel compounds <b>1</b>–<b>8</b> into perovskite
subclasses and proceeds in extracting the structure–band gap
relationships between them. The compounds were obtained from the employment
of small, 3–5-atom-wide organic ammonium ions seeking to discover
new perovskite-like compounds. The compounds reported here adopt unique
or rare structure types akin to the prototype structure perovskite.
When trimethylammonium (TMA) was employed, we obtained TMASnI<sub>3</sub> (<b>1</b>), which is our reference compound for a “perovskitoid”
structure of face-sharing octahedra. The compounds EASnI<sub>3</sub> (<b>2b</b>), GASnI<sub>3</sub> (<b>3a</b>), ACASnI<sub>3</sub> (<b>4</b>), and IMSnI<sub>3</sub> (<b>5</b>)
obtained from the use of ethylammonium (EA), guanidinium (GA), acetamidinium
(ACA), and imidazolium (IM) cations, respectively, represent the first
entries of the so-called “hexagonal perovskite polytypes”
in the hybrid halide perovskite library. The hexagonal perovskites
define a new family of hybrid halide perovskites with a crystal structure
that emerges from a blend of corner- and face-sharing octahedral connections
in various proportions. The small organic cations can also stabilize
a second structural type characterized by a crystal lattice with reduced
dimensionality. These compounds include the two-dimensional (2D) perovskites
GA<sub>2</sub>SnI<sub>4</sub> (<b>3b</b>) and IPA<sub>3</sub>Sn<sub>2</sub>I<sub>7</sub> (<b>6b</b>) and the one-dimensional
(1D) perovskite IPA<sub>3</sub>SnI<sub>5</sub> (<b>6a</b>).
The known 2D perovskite BA<sub>2</sub>MASn<sub>2</sub>I<sub>7</sub> (<b>7</b>) and the related all-inorganic 1D perovskite “RbSnF<sub>2</sub>I” (<b>8</b>) have also been synthesized. All
compounds have been identified as medium-to-wide-band-gap semiconductors
in the range of <i>E</i><sub>g</sub> = 1.90–2.40
eV, with the band gap progressively decreasing with increased corner-sharing
functionality and increased torsion angle in the octahedral connectivity