Abstract

<p>(A) Diagram of graphene placed by wedge transfer on top of prefabricated trench in SiO<sub>2</sub> substrate. A nanogap with width <i>w</i> is formed. A micropore is fabricated by electron-beam lithography over the nanogap location. (B) Optical microscope image of a graphene nanogap device with micropore at the same fabrication stage as Fig 1A, placed on an etched trench (yellow) in a 300 nm thick SiO<sub>2</sub> substrate (purple). Contrast has been enhanced. The fabricated micropore changes the color of the SiO<sub>2</sub> substrate and trench, making the trench appear brighter yellow and the fraction of uncovered unetched SiO<sub>2</sub> more purple. The image has 50% increased contrast and 30% reduced brightness. (C) Diagram of a graphene nanogap transferred to a measurement device with a ∼ 25 μm hole that the nanogap/micropore assembly is centered on. (D) Optical microscope image with enhanced contrast of a graphene nanogap device ready for transverse conductance measurements at the fabrication stage shown in Fig 1C.</p

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