Direct
Observation of Semiconductor–Metal Phase
Transition in Bilayer Tungsten Diselenide Induced by Potassium Surface
Functionalization
- Publication date
- Publisher
Abstract
Structures
determine properties of materials, and controllable
phase transitions are, therefore, highly desirable for exploring exotic
physics and fabricating devices. We report a direct observation of
a controllable semiconductor–metal phase transition in bilayer
tungsten diselenide (WSe<sub>2</sub>) with potassium (K) surface functionalization.
Through the integration of <i>in situ</i> field-effect transistors,
X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy
measurements, and first-principles calculations, we identify that
the electron doping from K adatoms drives bilayer WSe<sub>2</sub> from
a 2H phase semiconductor to a 1T′ phase metal. The phase transition
mechanism is satisfactorily explained by the electronic structures
and energy alignment of the 2H and 1T′ phases. This explanation
can be generally applied to understand doping-induced phase transitions
in two-dimensional (2D) structures. Finally, the associated dramatic
changes of electronic structures and electrical conductance make this
controllable semiconductor–metal phase transition of interest
for 2D semiconductor-based electronic and optoelectronic devices