Currently, renewable energies are being developed in order to replace the fossil fuels. In the re-newable energies field, photovoltaics plays a vital role. Thin film technology has the potential to be an important player in the renewable energy market since it can, still decrease significantly its production costs with high material savings while keeping very high values of electrical performance.
One of the thin film technologies is the Cu(In,Ga)Se2 (CIGS). This technology, with long term stability, high values of light to power conversion efficiency is already present in the market but many developments are still needed. One of them deals with the recombination losses happening in the CIGS interfaces which contribute to a decrease in its electrical performance. In order to prevent these losses, passivation layers placed in the interfaces of the CIGS can vastly decrease the recombination losses.
In this work, the aim is to study of the effects of different passivation materials on CIGS technol-ogy jointly with the best deposition conditions. Thus, several techniques like Raman spectroscopy, X-ray diffraction and photoluminescence, were used in order to study the CIGS surface damage due to the insulator deposition. Finally, MIS structures were fabricated to study the CIGS-insulator interface elec-trical properties
