Copper
nanowires (CuNWs) possess key characteristics for realizing
flexible transparent electronics. High-quality CuNW micropatterns
with high resolution and uniform thickness are required to realize
integrated transparent electronic devices. However, patterning high-aspect-ratio
CuNWs is challenging because of their long length, exceeding the target
pattern dimension. This work reports a novel reverse-offset printing
technology that enables the sub-10 μm high-resolution micropatterning
of CuNW transparent conducting electrodes (TCEs). The CuNW ink for
reverse-offset printing was formulated to control viscoelasticity,
cohesive force, and adhesion by adjusting the ligands, solvents, surface
energy modifiers, and leveling additives. An inexpensive commercial
adhesive handroller achieved a simple, fast, and scalable micropatterning
of CuNW TCEs. Easy production of high-quality CuNW micropatterns with
various curvatures and shapes was possible, regardless of the printing
direction. The reverse-offset-printed CuNW micropatterns exhibited
a minimum of 7 μm line width and excellent pattern qualities
such as fine line spacing, sharp edge definition, and outstanding
pattern uniformity. In addition, they exhibited excellent sheet resistance,
high optical transparency, outstanding mechanical durability, and
long-term stability. Flexible light-emitting diode (LED) circuits,
transparent heaters, and organic LEDs (OLEDs) can be fabricated using
high-resolution reverse-offset-printed CuNW micropatterns for applications
in flexible transparent electronic devices