DFT+U Study
on the Localized Electronic States and
Their Potential Role During H<sub>2</sub>O Dissociation and CO Oxidation
Processes on CeO<sub>2</sub>(111) Surface
We present the results of an extensive
density functional theory
based electronic structure study of the role of 4f-state localized
electron states in the surface chemistry of a partially reduced CeO2(111) surface. These electrons exist in polaronic states,
residing at Ce3+ sites, which can be created by either
the formation of oxygen vacancies, OV, or other surface
defects. Via ab initio molecular dynamics, these localized electrons
are found to be able to move freely within the upper surface layer,
but penetration into the bulk is inhibited as a result of the higher
elastic strain induced by creating a subsurface Ce3+. We
found that the water molecule can be easily dissociated into two surface
bound hydroxyls at the Ce4+ site associated with OV sites. This dissociation process does not significantly affect
the electronic structure of the excess electrons at reduced surface,
but does lead to a favorable localization on Ce3+ sites
in the vicinity of the resulting OH groups. In the presence of water,
a proton-mediated Mars-van Krevelen mechanism for CO oxidation via
the formation of bicarbonate species is identified. The localized
4f electrons on the surface facilitate the protonation process of
adsorbed O2 species and thus decelerate the further oxidation
of CO species. Overall, we find that surface hydroxyls formed via
water dissociation at the CeO2 surface lead to inhabitation
of the CO oxidation reaction. This is consistent with the experimental
observation of requisite elevated temperatures, on the order of 600
K, for this reaction to occur