On basis of the first-principles
calculations, we have studied
the effects of hole doping and biaxial tensile strain on the electronic
and magnetic properties of monolayer of platinum diselenide (PtSe2). Due to the large density of states near the valence band
edge, this nonmagnetic monolayer semiconductor switches to a ferromagnetic
half metal within a small range of hole doping. With an increase of
hole density, average magnetic moment per carrier also increases and
reaches at its maximum value over a specific range of carrier density,
while the system remains in a half metal state before the magnetic
moment abruptly begins to fall. We also predict a critical value of
biaxial tensile strain (5%) for doped monolayer PtSe2,
after which the optimal carrier density becomes constant, while the
magnetic moment/carrier gradually increases and the ferromagnetic
state of the system becomes more stable with increasing values of
strain. This work paves a possible way to engineer the magnetic properties
of the two-dimensional nanomaterials