A statistical summary of electrical characterization was performed on JAN diodes and transistors. Parameters are presented with test conditions, mean, standard deviation, lowest reading, 10% point, 90% point and highest reading

Takeda, H.

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https://ntrs.nasa.gov/search.jsp?R=19780003354 2020-03-22T07:06:39+00:00Z
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(NASA-CR-150W) JAN TRANSISTOR ANT) DIODE	 N78-11297
CUARAcrE.,IZA1ION ILS1 PRCGFA4 final Pe Fort
(DCA Reliability Labs., Sunnyvale, Calif.)
15 P HC A02/MF A0 1 	CSCL 09A	 Unclas
:3133 53540
JAN TRANSISTOR AND DIODE
CHARACTERIZATION TEST PROGRAM
FAAt_ REPORT
FOR
JANTX DIODE
1N554
MA:-,C11 1977
Prepared
for
GFORGE C. MARSHALL SPACE FLIGHT CENTER
NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Ma , shall Space FI,ght Center, Alabama 39R12
MSFC%NASA CCNTRACT No. NASb-71944
by
HIRO TAKEDA
t. C^ U tyU 5 
^^j^^
DCA RELIAB I LITY L-90RATORY
SPECIAL PRODUCTS DIVISION
975 BENICIA AVE.
SLNNYVALE, CALIFORNIA 94086
RELIABILITY LABORATORY
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JAN TRANSISTOR AND DIODE
CHARACTERIZATION TEST PROGRAM
FINAL REPORT
FOR
JANTX DIODE
1N5554
MARCH ]977
Prepared
for
GEORGE C. MARSHALL SPACE FLIGHT CENTER
NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
Marshall Space Flight Cantor, Alnbama 35912
MSFCINASA CONTRACT No, NASS-31944
by
HIRO TAKEDA
DCA RELIABILITY LABORATORY
SPECIAL PRODUCTS DIVISION
975. BENICIA AVE.
SUNNYVALE, CALIFORNIA 94088
i
016;A
DCA RELIABILITY LABORATORY
FORWARD
This report	 is	 a statistical summary of	 the electrical
characterization performed 	 on NASA Contract NA8-31944.
This	 is	 one of	 a group of	 thirty - nine	 ( 39)	 such	 reports
prepared on selected JAN and JANTX Transistors and Diodes
for	 the George C.	 Marshall	 Space 'flight	 Center,
	 Huntsville,
i.
Alabama.	 The Contracting Officer's Technical Representative
was Mr.
	
Howard B.	 Meeks.
This work was performed by DCA Reliability Laboratory,
Special Products Division,	 Sunnyvale,	 California under
	 the
management of Mr.	 Robert Starr with the special assistance
of Mr.	 Barry Lorenzo,	 Mr.	 Kenneth Radford and Mr. 	 Hiroharu
Takeda.
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CONTENTS
1.0 INTRODUCTION	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 1-1 {
1.1	 Sample	 Selection	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 1-1
1.2	 Procurement	 Guidelines	 .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 1-1
2.0 TECHNICAL	 SUMMARY	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 2-1
?,.1 'iEST PARAMETERS	 AND	 CONDITIONS	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 2-1
i
2.1.1	 Reverse	 Current	 (I R )	 .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 2-1
2.1.3	 Breakdown Voltage	 ( B V ) 2-1
2.1.4
	
Forward	 Current	 ( VF )	 .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 2-1
2.1.7	 Thermal Resistance,	 test	 in DEG/W	 (0 J-C ) '	 '	 '	 •	 2-1
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4 2.2 UNIT	 DEFINITIONS	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 2-2
3.0 STATISTICAL	 SUMMARY	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 3-1
j 4.0 HISTOGRAM	 DATA	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 4-1
4.1	 1 	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 4-2
4.2	 1 R	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 4-9
4.3	 B V 	.	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 4-13
ij 4.4	 VF1 4 - 17a„
„.
4.5	 V F2	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 4-24
it 4.6	 V F3 4-31
4.7	 9,_	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 . .	 .	 .	 .	 4-38
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CONTENTS (CON'T'INUED)
5.0 NUMERICAL DATA T A - 250C
(Book 2 EC 43 & EG 02 MSPC only) . . . . 5-1	 W. i
6.0 NUMERICAL DATA T A - +1500C
(Book 2 EC 43 & EG 02 MSPC only) . . . . 6-1
7.0 NUMERICAL DATA T A = —650C
(Book 2 EC 43 & EG 02 MSPC only) . . . . 7-1
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LIST OF ILLUSTRATIONS
FIGURE
2-1 Internal Construction Semtech	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 2-3,
2-2 Internal Construction Semtech	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 .	 2-3
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2-3 Internal Construction Micro	 Semiconductor	 .	 .	 .	 .	 .	 .	 2-4
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1.0 INTRODUCTION
The objective of this characterization program is to
provide the necessary data to create a new class of
19500 detail specifications "JAN A CLASS".
1.1 SAMPLE SELECTION
Sample selection was made according to the following
criteria:
1. Manufacturer or qualified distributor.
2. Two vendors.
3. Two date codes.
1.2 PROCUREMENT GUIDELINES
The general guidelines for procurement were:
1. Two QPL vendors
2. JAN or JANTX
3. Two (2) manufacturing lots (Date Codes), twenty-
seven (27) from each lot.
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1-1
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2.0 TECHNICAL SUMMARY
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The devices used in this report were JANTX 1N5554
Silicon Diodes manufactured by Micro Semiconductor
and Samtech.
All data was acquired with three (3) digit acetracy.
The data processing and calculation of statistical
parameters was performed by the Tektronix S-3260
computer system using four (4) digit display.
2.1 TEST PARAMETERS AND CONDITIONS
2.1.1 1 V 	 - 1000V	 (Max. Rated VR ) TA = 25 0 C & 1500C
2.1.2 1 R V 	 = 1000V (Max. Rated V R ) TA =	 250C
Reverse Current, applied	 after stress	 test of
I fsm -	 30A	 (PK) 10 surges	 of 8.3MS each at
1-minute interval.
2.1.3 B I 	 = 50.OmA	 T A =	 250C
2.1.4 Vr1 I 	 = 0.9A	 (10%	 of Rated	 Ir ) TA =	 25
0 C & -650C
2.1.5 VP2 I 	 = 4.5A	 (50%	 of Rated	 I L ) TA =	 25
0 C & -650C
2.1.6 VP3 I 	 = 9. OA (,100% of Rated	 Ir) T A =	 25
0 C & -6500
2.1.7
eJ-C TA = 1000C
2.2 UNIT DEFINITIONS
NAME SYMBOL MULTIPLIEN
103,1Kilo K
10Miili M -6
10Micro U -9
Nano N to
101 1Pico P
Example using a statistical summary section:
	
1 h	 i N AfA PS	 AT	 15 DEGNr:E:ti
Al VF+=2.04 VULTS
	
--	 - ------- - - - -- --------------- --- - -----------
IfAH111/
	
7603:	 ?.514;f 	!	 71N.7U	 2.0101.1	 !	 2.0 14014	 2.780M
1401U/	 'Isbu1
	 2,413M	 27n.90	 2.()1UM	 !	 %.11SUTA	 2. 780M
! :II•,M	 750N!
	 2.947 M 	42b.5U	 1 . ►120M	 !	 J.49011	 !	 i.4HOM	 !
Mflli
	
Micro
Example using a histogram:
URO —
8 .06 
-i;0000191000000 
it 
Is so$ esto p	 ols Moo
 r-
	
1.3M	 1.61 M	 2 . em	 2.5m	 3 . am	 3.3m
	
1.37M	 I.63^1	 2.331	 2.81M	 3.29M	 3.7T
OUT 0	 ♦ 	 0 OUT
milli
2-2
)ttlN
,`JNAr, pAr;k: Ly
^h ^' K ^h ^^ 
^q l. lTY
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FIGURE i
Device Number E026817
	
Typical Overall Cross-sectional
20 Diameters	 D/C 7546
	
view
Mfy: Senitech
FIGURE 2
Device Number E026698
	
Typical Overall Cross-sectional
20 Diameters	 h/C 7635
	
view
Mfg: Semtech
2-3
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Device Number E026845
20 Diameters
FIGU RL•' 3
Typical Overall Cross-sectional
DEC ' ? 633	 view
Mfg: MSC
iEXAMPLE:
r MICRO SEMICONDUCTOR:
Summary:
Histogram:
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I 	 V  - 1000V	 TA = 250C
MEAN 55.34N
MEAN 54159N
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3.0 STATISTICAL SUMMARY
The Statistical Summary, pages 3-2 to 3-4, are a
consolidated presentation of the data acquired for-
matted for easy Vendor to Vendor and date code to
date code analysis. Each parameter •: s presented with
Test Conditions, Mean, Standard Deviation, Lowest
Reading, 102 Point (where 102 of all readings are
equal to or less than the indicated reading), 902
Point (where 902 of all readings are equal to or
less than the indicated reading) and the Highest
Reading.
It should be noted the Mean presented in the summary
may vary slightly from that presented on the Histo-
grams due to a slight variation in the data base
used for calculation.
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I)CA WilAlsIL1'1• Y LAt+017ATQ8Y
PAN'/ NU(4ts isR :)N5954
VEN0014 :MICkt) SEM ICONU	 HATE; CODE: : 7633
VENUUk :bk;MIll.CH	 GATE CIIUIi :	 7546
VF:NOOP : SF:MTECII 	 I)A I e CODE; :	 7635
-	
-	
--
^ i-• ---------
	
---^ -----	 ------ -
i-	 -i-	 -ice	 •---------	 --------	 ---- --	 ---------^-	 -i
'VEND	 / DC	 ! IAKAN	 !	 .S •IU.	 UE.V.;	 Low	 P'1' !	 10$	 PT	 ! 904i	 PT !	 HIGH	 PT.	 +•
.-----------i--- 1	 i	 1	 i----°- -----°-° ---------- --------° --°---°- ----------
I  IN	 AMPS	 A 	 25	 UEGRE.E.S
AT	 VP=JOUO	 VOLTS
----------- -----------
7
---------------------- ---------- ---------- ---------- '
7
	
7 7
!MSI
	
/ 7633! 55.34N	 !	 42..96^4	 !	 25,80N !	 29. JON	 ! 73.50N !	 313.ON
;5LMT/ •)S46! 125.7 ,1'	 !	 89.93N	 !	 5.50014 !	 1N OON	 ! 198.ON !	 413.ON	 !
;9V,M'I'/ 7635! 240	 Gt	 !	 128.4N	 !	 99.9ON !	 J J9, ON	 ! 350.0,14 !	 550.ON
i
I  [tl	 AMPS	 All	 150	 DEGREES
AT	 VR=1000	 VOLTS
•---------- 7
—w-------	 ----------- --------------------------------°---------
;MSI	 / 7633! 21.320	 !	 4.131U	 !	 7.270U !	 6.990U	 ; 30.000 ;	 47.60(1	 t
;SEMI/ 7'546; 10 •/.30	 ;	 29.7/,10	 ;	 5',.30U !	 55.IOU	 ! 1	 30.01) !	 176.01)
;SF:E1T/ 71)35; 119. 3U	 !	 21.270	 ;	 79.901) !	 88.70U	 ; 142.OU !	 187.00
--_—__—°---^--- ------------- 	 -------°!
	
J P2	 IN AMPS	 A 	 25 Dt.*GREF.S
AT VR=1000 V g L'IS (POST IM
----	
----------- ---------- — ---------- -----
	 — ----
;MS1 /	 7633:	 192.21)	 !	 1.372M	 !	 560.OP
	 !	 22.6UN	 !	 58.40N	 !	 245.ON
15E.M'f/	 1546!	 1UP,9N	 !	 52.36N	 !	 390.OP	 !	 30.70N	 !	 147.0N	 !	 238.ON
;SP-MT/	 7635!	 225.5N	 !	 III.3N	 !	 lb.90N	 !	 99.9011	 !	 276.ON	 !	 492.ON
3-2
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DC  1+F 61 All Ili ilY ILA151114A'IUHY 	 ORIGINAL PAGE IS
Or POOR QUALM
f	 PAk1' hUMhkk !'N5554
•--------	 ---------- --------- ---------	 -------- ---• ---- ---------
lVEt1U / DC	 !	 11F AN	 ! S'1'0. OF'V.!	 LUw P'I
	
10% P'f	 !	 90% P'1'	 ! NIGH PT.
kV IM	 VO61'S Al'	 25 UF.GRKES
A1'	 IR-50.0 UA
----------- ; ------------ ------- ---T ---------- 7 ---------- 7 ----------- ------------
;MST	 /	 1b33' 1.220K	 ! 43.h9 !	 1.112K	 !	 1.1'16K	 !	 1.276K	 !	 1.310K	 w
1SE.M'f/
	 754b' 1.242K	 ! 39.54 !	 1.18UK	 !	 1.192K	 !	 1.292K	 !	 1.340K
I SE.MT/	 7635 1 1.21HK	 ! 83.b3 !	 1.172K	 !	 1.18HK	 !	 1.379K	 !	 1..43HK
« « «	 «	 «	 «
VF 1	 114 V0WVS Al ,
	
2S DGGREES
A'f 1 F'=O.9 AMPS
----------- ---------- i ---------- 7 ---------- i ---------- 7 ---------- 7 ----------
!11,51	 / 7633! h27.2M	 ! 59.801 !	 504.OM !	 539.OM	 ! b64.014	 ! 812.014	 !
!SF'MT/ 7546! ch3.'31	 ! 119. bid !	 :,Hb.01 !	 473.0M	 ! 795.OM	 ! 877.OM
lSEWV/ '7b35! 618.5M	 ! 126.9M !	 223.0M I	 395.OM	 ! 7bO.OM	 ! 792.014
« «	 «	 «	 «	 -
VF'1 IN	 VUL' S Al'	 -05 DbGkFF,S
i
A'C	 iF=0.9 AMPS
;-----------.------- -------------i----------:----------.----------;----•------
lMS1 7b33! 955.71	 ! 7.5251 !	 442.OM !	 94b.OM	 ! 965.01	 ! 47H.OM
lSF:MT/ 7546! 947.? Ni	 ! R.7Bb m !	 930.011 !	 931.OM	 ! 961.OM	 ! 9bb.014	 !
!SKMI 76351 944.7'4	 ! 8.208 NI !	 927. OM !	 934.01	 ! 953.'.1	 ! 904.OM
i	 -'
it
02 IM	 V01,16 Al'	 ').b T)E,GI+F.F;S
Al'
	 1F5
--4-----------°-----------------------------------------'I'''--------------
!MS1	 / 7b33! 972.014	 ! 45.73M !	 `104.01 !	 744.0,4	 ! 968.0M	 ! 918.ONI
!SEA I/ 754b! 849.bht	 ! 112.61 !	 391.011 !	 694.OM	 I 930.01	 ! 999.01
!SF1 M1'/ 7b35! 862.OM	 ! H5.35M !	 64U.UN !	 651.OM	 ! 930.OM	 ! 981.014	 !
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^-	 DCA RELIABILITY LAMLIPAIUPY ORIGINAL PAGE IS
	
PAk3 NUF , LA PI( :1N55' 4	 OP POOR QUALITY
: 
----------- . ---------- :-- -------- . ---------- : ---------- 7 ---------- : ----------
!VENO / DC
	 !	 MEAN	 ! STO. DEV.!
	 IjOW P'I	 !	 10^ PT	 !	 90% PT ! HIGH PT.
----------=-------°-=--------------------- ------------I----------
	
VF 2	 1 N VIIL,TS	 AT	 - bS 1)EG14F,ES
Al 1F=4.5 AMPS
.---------- ------------° ------- -------- -- --
	 -------- - -------°
'MS1 /
	 7631!	 1.088	 !	 26.86' 	 !	 1.040	 !	 1.050	 !	 1.120	 !	 1.160
!SEMT/	 75461	 1.118	 !	 28.10
	 !	 1.040	 !	 1.090	 !	 1.140	 !	 t.190
!SEMT/	 7635 ;
	!	 36.5514	 !	 t.Ob(1	 !	 1.UbO	 1	 1.170	 !	 1.180
	
F3	 IN VUIJS Al	 5.5 DEGPEES
AT 1F=9.0 AMP:
•------------ -----------°-------- 	 ----------------- -
!1451 /	 7633!	 916.9M	 !	 44.813;",	 !	 825.OM	 !	 848.OM	 !	 9b3.OM	 !	 1.ObO
!SEMT/	 7546!
	 980.94	 !	 190.9^'
	 !	 557.OM	 !	 753.OM	 !	 1.080	 !	 1.180
lSFa1'I'/	 7635!	 1.019	 !	 97.12k1	 !	 795. UM	 !	 831 .OM	 !	 1.100	 !	 1.160
1------------
^---	
-_-_-^------^---=--- ----
	
VP 	 IN Vubl'S Al1 -65 DEGkEKS
AT IF=9.0 AMPS
•------------ ----------- ----------------^--°° ---------- ------------- -----------!	 !	 !	 !	 1	 !	 !
!MS1 /	 7b33!	 1.18 yi	 !	 29.03M	 !	 1.130	 !	 1.160	 !	 1.220	 !	 1.270
lSFM1'/	 7546!	 1.257	 !	 47.9614	 !	 1.210	 !	 1.9(0	 !	 1.330	 !	 1.360
!SEMI, /	 76351	 1.278	 !	 54.43M	 1	 1.200	 1	 1.210	 1	 1.350	 !	 1.400
1----------- °---------- ---------- - ---------- ----------- ---------°^-----------
0 -J-C	 IN DEG/V:	 AT	 100 UF:(-kF:F:S
(JLINC'f 1(1N TO CASE)
-------------------------._----------------------------------------------------
!	 !	 !	 !	 !	 !	 1
'MSI /	 76331	 8.29b	 !	 395.1M	 !	 7.467	 !	 '7.'7b9	 !	 8.774	 !	 9.307	 !
1SEMT/	 7546!
	
6.541
	 !	 882.'2M	 !	 4.629	 !	 5.179	 !	 7.417	 !	 8.325	 !
!SEMT/	 7b35!	 7.230	 !	 4'73. UM	 !	 6.31b	 !	 6.490	 !	 7.670	 !	 8.199
!--°- - - - - - -
	
--------------------- --°------_--------
3-4
i%,


JAN transistor and diode characterization test program

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