Gas-sensitive properties of oxide systems based on ln203 and Sn02 obtained by sol-gel technology

Abstract

The influence of structural features of ln203, Sn02, Mo03 and Fe203 simple oxides and their composites on the properties of the corresponding semiconductor gas sensors with regards to different gases (CO, CH4, NH3, C2H5OH, CH3OH, NO, N02, 03) have been studied. Structural peculiarities of oxide systems obtained by sol-gel technology have been considered. It was shown the possibility to control the sensor sensitivity to the mentioned above gases by varying chemical composition of sensitive materials and adjusting their structure, as well as by regulat-ing of detecting temperatur