Contains research objectives.National Aeronautics and Space Administration (Grant NRG-22-009-163

Rafuse, R. P.

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XIV. NOISE IN ELECTRON DEVICESAcademic and Research StaffProf. R. P. RafuseDr. D. H. SteinbrecherJ. W. MajerGraduate StudentsJ. E. RudzkiA. A. M. M. SalehR. E. SnyderRESEARCH OBJECTIVESWe shall continue development of the theory and practice of ultralow noise mixers.Recent theoretical developments, together with some experimental evidence, indicatethat balanced mixers are fundamentally different from single-ended (one-device) mixers.Some of the fundamental limits on balanced mixer performance have been developed andindicate, for example, that properly operated, high-quality, Schottky-barrier diodesshould be capable of giving noise figures in balanced mixers commensurate with thoseobtainable (at the same frequency with the same diodes) in an uncooled parametricamplifier.Experimental circuits are being constructed, according to the new theory, at300 MHz, 3 GHz, 7 GHz, and 60 GHz. Conversion losses and noise figures expected at300 MHz and 3 GHz are below I db; at 7 GHz we expect to realize less than 3 db, and at60 GHz less than 5 db. Unanswered problems of bandwidth and optimum local-oscillatorsource impedance (including harmonics) will receive experimental and theoretical atten-tion during the design of the various mixers. At the same time, experimental and theo-retical evidence will be sought to determine the fundamental limits placed by p-n junctiontheory on the ability of the p-n junction to be driven as a square-wave switch at micro-wave frequencies.R. P. RafuseThis work is supported in part by the National Aeronautics and Space Administration(Grant NRG-22-009-163).QPR No. 88

Noise in Electron Devices

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Noise in Electron Devices

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