High Voltage Operation of heavily irradiated silicon microstrip detectors

Albergo, S; Angarano, M M; Bader, A; Biggeri, U; Boemi, D; Braibant, S; Breuker, H; Bruzzi, Mara; Caner, A; Catacchini, E; Civinini, C; Creanza, D; D'Alessandro, R; De Palma, M; Demaria, N; Dollan, Ralph; Dollan, Ralph; Eklund, C; Feld, L; Fiore, L; Focardi, E; Fürtjes, A; Glessing, B; Gu, W H; Hall, G; Hammerstrom, R; Huhtinen, M; Karimäki, V; König, S; Lenzi, M; Lübelsmeyer, K; Maggi, G; Mannelli, M; Marchioro, A; Mariotti, C; McEvoy, B; Meschini, M; My, S; Mättig, P; Pandoulas, D; Parrini, G; Peisert, Anna; Pieri, M; Potenza, R; Raso, G; Raymond, M; Schmitt, B; Selvaggi, G; Siedling, R; Silvestris, L; Skog, K; Stefanini, G; Tempesta, P; Tricomi, A; Watts, S; Wittmer, B

High Voltage Operation of heavily irradiated silicon microstrip detectors

Abstract

We discuss the results obtained from the R&D studies, done within the CMS experiment at LHC related to the behaviour of silicon microstrip prototype detectors when they are operated at high bias voltages before and after heavy irradiation, simulating up to 10 years of LHC running conditions. We have found detectors from several manufacturesrs that are able to work at V_bias > 500 Volts before and after the irradiation procedure, maintaining an acceptable performance with S/N > 14, efficiency close to 100% and few ghost hits

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