An exact relation between the conductance maximum G0β at zero temperature
and a ratio of lead densities is derived within the framework of the single
impurity Anderson model: G0β=R[n]h2e2β, where
R[n]=4ΞNL,xβΞNR,xβ/(ΞNL,xβ+ΞNR,xβ)2 and ΞNL,xβ, ΞNR,xβ denote the excess density in the left/right lead at distance x due to
the presence of the impurity at the origin, x=0. The relation constitutes a
parameter-free expression of the conductance of the model in terms of the
ground state density that generalizes an earlier result to the generic case of
asymmetric lead couplings. It turns out that the specific density ratio,
R[n], is independent of the distance to the impurity x, the
(magnetic) band-structure and filling fraction of the contacting wires, the
strength of the onsite interaction, the gate voltage and the temperature.
Disorder induced backscattering in the contacting wires has an impact on
R that we discuss. Our result suggests that it should be
possible, in principle, to determine experimentally the peak conductance of the
Anderson impurity by performing a combination of measurements of ground-state
densities.Comment: 5 pages, 3 figures, accepted by EP