application/pdfThe vapor growth of GaSb was experimentally studied using a closed tube transport technique. In the closed tube process with low density of iodine (~10-4mg/cm3) as a transport agent, undoped GaSb was appreciably grown on (100) or (111) oriented GaSb substrates even at a relatively low temperature of 500℃. The electrical measurements showed that the grown layer with higher purity was obtained in this growth system.departmental bulletin pape
